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IXFR4N100Q

MOSFET 3.5 Amps 1000V 3 Rds

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SeekIC No. : 00154489 Detail

IXFR4N100Q: MOSFET 3.5 Amps 1000V 3 Rds

IXFR4N100Q Data Sheet

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Part Number:
IXFR4N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 3.5 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 3 Ohms
Packaging : Box


Features:

Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS)
Fast intrinsic Rectifier


Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
IAR		 TC = 25
TC = 25, Note 1
TC= 25		 3.5
16
4		 A
A
A
EAR
EAS		 TC = 25
T = 25		 20
700		 mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 2 		5 V/ns
PD TC = 25 80 W
TJ
TJM
Tstg		   -55 ... +150
            150
-55 ... +150

TL 1.6 mm (0.063 in.) from case for 10 s 300
VISOL 50/60 Hz, RMSt = 1 min 2500 V~
Weight   5 g



Parameters:

Technical/Catalog InformationIXFR4N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C3.5A
Rds On (Max) @ Id, Vgs3 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max80W
PackagingBulk
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR4N100Q
IXFR4N100Q



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