MOSFET F -Class HiPerRF Capable MOSFETs
IXFR55N50F: MOSFET F -Class HiPerRF Capable MOSFETs
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 45 A | ||
| Resistance Drain-Source RDS (on) : | 0.09 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | ISOPLUS 247 | Packaging : | Tube |
| Symbol | Test Conditions |
Maximum Ratings | |
| VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS= 1 M |
500 500 |
V V |
| VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
45 200 55 |
A A A |
EAR EAS |
TC = 25°C TC = 25°C |
60 3.0 |
mJ J |
| dv/dt | IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 |
10 |
V/ns |
| PD | TC = 25°C |
400 |
W |
|
TJ |
-40 ... +150 150 -40 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.063 in.) from case for 10 s |
300 |
°C |
| VISOL | 50/60 Hz, RMS t = 1 min |
2500 |
V~ |
| Weight |
5 |
g | |