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IXFT13N100

MOSFET 1KV 12.5A

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SeekIC No. : 00164437 Detail

IXFT13N100: MOSFET 1KV 12.5A

IXFT13N100 Data Sheet

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Part Number:
IXFT13N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.05 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-268


Parameters:

Technical/Catalog InformationIXFT13N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C12.5A
Rds On (Max) @ Id, Vgs900 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT13N100
IXFT13N100



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