MOSFET 1KV 12.5A
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Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 12 A | ||
| Resistance Drain-Source RDS (on) : | 1.05 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-268 | Packaging : | Tube |
| Technical/Catalog Information | IXFT13N100 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 12.5A |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 4000pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 155nC @ 10V |
| Package / Case | TO-268 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFT13N100 IXFT13N100 |