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IXGT6N170

IGBT Transistors 12 Amps 1700 V 4 V Rds

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SeekIC No. : 00143062 Detail

IXGT6N170: IGBT Transistors 12 Amps 1700 V 4 V Rds

IXGT6N170 Data Sheet

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Part Number:
IXGT6N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 4 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : TO-268-3
Collector-Emitter Saturation Voltage : 4 V


Parameters:

Technical/Catalog InformationIXGT6N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)12A
Vce(on) (Max) @ Vge, Ic*
Power - Max75W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT6N170
IXGT6N170



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