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IXKP35N60C5

Transistors RF MOSFET Small Signal 35 Amps 600V

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SeekIC No. : 00221000 Detail

IXKP35N60C5: Transistors RF MOSFET Small Signal 35 Amps 600V

IXKP35N60C5 Data Sheet

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Part Number:
IXKP35N60C5
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Resistance Drain-Source RDS (on) : 0.1 Ohms Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Power Dissipation :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.1 Ohms
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 35 A
Mounting Style : Through Hole
Package / Case : TO-220AB


Parameters:

Technical/Catalog InformationIXKP35N60C5
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs100 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 100V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKP35N60C5
IXKP35N60C5



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