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IXTA120N04T2: MOSFET 120 Amps 40V

IXTA120N04T2 Data Sheet

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Part Number:: IXTA120N04T2
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	120 A
Resistance Drain-Source RDS (on) :	0.0061 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Continuous Drain Current : 120 A
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.0061 Ohms

Parameters:

Technical/Catalog Information	IXTA120N04T2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	6.1 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3240pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA120N04T2 IXTA120N04T2

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IXTA120N04T2

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