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IXTH30N60L2

MOSFET 30 Amps 600V

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SeekIC No. : 00153837 Detail

IXTH30N60L2: MOSFET 30 Amps 600V

IXTH30N60L2 Data Sheet

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Part Number:
IXTH30N60L2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 30 A Resistance Drain-Source RDS (on) : 240 mOhms
Configuration : Single Maximum Operating Temperature : + 150 C
Package / Case : TO-247    

Description

Gate-Source Breakdown Voltage :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 240 mOhms


Parameters:

Technical/Catalog InformationIXTH30N60L2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs240 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10700pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs*
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH30N60L2
IXTH30N60L2



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