IXTH36P10

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.075 Ohms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 36 A
Package / Case : TO-247AD


Features:

• International standard package JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH)
- easy to drive and to protect


Application

• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment


Specifications

Symbol	Test Conditions	Maximum Ratings
VDSS VDGR	TJ = 25 to 150 TJ = 25 to 150; RGS = 1M	-100 -100	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM IAR	TC = 25 TC = 25, Note 1 T C= 25	-36 144 -36	A A A
EAR	TC = 25	30	mJ
PD	TC = 25	180	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150
TL	Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s	300
Md	Mounting torque	1.13/10	Nm/lb.in
Weight		6	g

Parameters:

Technical/Catalog Information	IXTH36P10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	75 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH36P10 IXTH36P10