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IXTH50N30

MOSFET 59 Amps 300V 0.065 Rds

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SeekIC No. : 00159169 Detail

IXTH50N30: MOSFET 59 Amps 300V 0.065 Rds

IXTH50N30 Data Sheet

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Part Number:
IXTH50N30
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.065 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 50 A
Packaging : Bulk
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.065 Ohms
Drain-Source Breakdown Voltage : 300 V


Parameters:

Technical/Catalog InformationIXTH50N30
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs65 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs165nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH50N30
IXTH50N30



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