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IXTP1N100

MOSFET 1.5 Amps 1000V 11 Rds

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SeekIC No. : 00154029 Detail

IXTP1N100: MOSFET 1.5 Amps 1000V 11 Rds

IXTP1N100 Data Sheet

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Part Number:
IXTP1N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 11 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 1.5 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 11 Ohms


Features:

· International standard packages
· High voltage, Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching times


Application

· Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers
· High frequency matching


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 21
84		 A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C		 1.5
6
200		 A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 18 Ω		 3 V/ns
PD TC = 25°C 500 w
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   4 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXTP1N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs11 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max54W
PackagingTube
Gate Charge (Qg) @ Vgs14.5nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP1N100
IXTP1N100



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