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IXTP50N20PM

MOSFET 20 Amps 200V 0.060 Ohm Rds

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SeekIC No. : 00151191 Detail

IXTP50N20PM: MOSFET 20 Amps 200V 0.060 Ohm Rds

IXTP50N20PM Data Sheet

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Part Number:
IXTP50N20PM
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.066 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.066 Ohms


Parameters:

Technical/Catalog InformationIXTP50N20PM
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs60 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2720pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP50N20PM
IXTP50N20PM



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