MOSFET 20 Amps 200V 0.060 Ohm Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A | ||
| Resistance Drain-Source RDS (on) : | 0.066 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Technical/Catalog Information | IXTP50N20PM |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 2720pF @ 25V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTP50N20PM IXTP50N20PM |