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IXTP7N60PM

MOSFET 7 Amps 600V

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SeekIC No. : 00151011 Detail

IXTP7N60PM: MOSFET 7 Amps 600V

IXTP7N60PM Data Sheet

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Part Number:
IXTP7N60PM
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 1.1 Ohms


Parameters:

Technical/Catalog InformationIXTP7N60PM
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 1180pF @ 25V
Power - Max41W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP7N60PM
IXTP7N60PM



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