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MFG:SAMSUNG  Package Cooled:DIP/SOP  D/C:08+  

K4H560838F-UCCC Product Image

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Part Number: K4H560838F-UCCC

 

MFG: SAMSUNG

Package Cooled: DIP/SOP

D/C: 08+

 

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K4H560838F-UCCC Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD,VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

K4H560838F-UCCC Features

• 200MHz Clock, 400Mbps data rate.
• VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant

K4H560838F-UCCC Connection Diagram

K4H560838F-UCCC  Connection Diagram

K4H560838F-UCCC datasheet

K4H560838F-UCCC
PDF/DataSheet Download

  • Datasheet: K4H560838F-UCCC
  • File Size: 175472 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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