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Part Number: K4S640432F

 

 

 

 

Description: The K4S640432F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 wo...


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K4S640432F General Description


The K4S640432F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

K4S640432F Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
 

K4S640432F Features

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
       -. CAS latency (2 & 3)
       -. Burst length (1, 2, 4, 8  & Full page)
       -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)

K4S640432F Connection Diagram

K4S640432F  Connection Diagram

K4S640432F datasheet

K4S640432F
PDF/DataSheet Download

  • Datasheet: K4S640432F
  • File Size: 100653 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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