Purchase K4S640432H-TC(L)75, In-stock K4S640432H-TC(L)75 From SeekIC.
Part Number: K4S640432H-TC(L)75
Description: The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM org...
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K4S640432H-TC(L)75
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DataSheet
General Description
K4S640432H-TC(L)75 General Description
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow he same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S640432H-TC(L)75 Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
K4S640432H-TC(L)75 Connection Diagram
K4S160822D
PDF/DataSheet Download
- Datasheet: K4S160822D
- File Size: 1211444 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L55
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S640432H-TC(L)75 Relative Products
K4S640432F
The K4S640432F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock ...
K4S640432D
The K4S640432D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S56323PF-F(H)G/F90
The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock and ...
K4S56323PF-F(H)G/F75
The K4S56323PF-F(H)G/F75 is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design of K4S56323PF-F(H)G/F75allows precise cycle control ...
K4S56323PF-F(H)G/F1L
The K4S56323PF-F(H)G/F1L is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design of K4S56323PF-F(H)G/F1Lallows precise cycle control ...
K4S56323LF-FE
The K4S56323LF-FE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits , fabricated with SAMSUNG's high performance CMOS technology. Synchronous designof K4S56323LF-FEallows precise cycle control with the use...
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