Purchase K4S640432H-UC, In-stock K4S640432H-UC From SeekIC.
Part Number: K4S640432H-UC
Description: The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM org...
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K4S640432H-UC
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DataSheet
General Description
K4S640432H-UC General Description
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S640432H-UC Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to VSS |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Voltage on VDD supply relative to VSS |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
°C |
| Power dissipation |
PD |
1 |
W |
| Short circuit current |
IOS |
50 |
mA |
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
K4S640432H-UC Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Pb-free Package
• RoHS compliant
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Pb-free Package
• RoHS compliant
K4S640432H-UC Connection Diagram
K4S640432H-UC
PDF/DataSheet Download
- Datasheet: K4S640432H-UC
- File Size: 148121 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS t...
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