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Part Number: K4S640832H-TC(L)75

 

 

 

 

Description: The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM org...


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K4S640832H-TC(L)75 General Description


The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow  he same device to be useful for a variety of high bandwidth, high performance memory system applications.

K4S640832H-TC(L)75 Features

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)

K4S640832H-TC(L)75 Connection Diagram

K4S640832H-TC(L)75  Connection Diagram

K4S640832H-TC(L)75 datasheet

K4S160822D
PDF/DataSheet Download

  • Datasheet: K4S160822D
  • File Size: 1211444 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

Find K4S640832H-TC(L)75 Suppliers

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K4S640832H-TC(L)75 Relative Products

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    The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O tr...

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    The K4S640832D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technol-ogy. Synchronous design allows precise cycle control with the use of system clock I/O...

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  • K4S640432H-TC(L)75

    K4S640432H-TC(L)75

    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS t...

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