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K4S643232E-N

Features: • 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation • MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)•All inputs are sa...

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SeekIC No. : 004383027 Detail

K4S643232E-N: Features: • 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation • MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst len...

K4S643232E-N Data Sheet

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Part Number:
K4S643232E-N
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

•  3.3V power supply
•   LVTTL compatible with multiplexed address
•   Four banks operation
•   MRS cycle with address key programs
         -. CAS latency ( 2 & 3)
         -. Burst length (1, 2, 4, 8 & Full page)
         -. Burst type (Sequential & Interleave)
•  All inputs are sampled at the positive going edge of the system clock
•  Burst read single-bit write operation
•  DQM for masking
•  Auto & self refresh
•  15.6us refresh duty cycle 
• Extended Temperature range : -25 to +85


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA



Description

The K4S643232E-N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232E-N allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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