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K4X56323PG - 7

Features: • 1.8V power supply, 1.8V I/O power• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• Differential clock inputs(CK and CK)• MRS cycle with address key programs- CAS Latency ( 2, 3 ...

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SeekIC No. : 004383086 Detail

K4X56323PG - 7: Features: • 1.8V power supply, 1.8V I/O power• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• ...

K4X56323PG - 7 Data Sheet

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Part Number:
K4X56323PG - 7
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• DM0 - DM3 for write masking only.
• Auto refresh duty cycle
- 15.6us for -25 to 85 °C


Specifications

Ratings Symbol
Value
Unit
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
VIN, VOUT
VDD
VDDQ
TSTG
PD
IOS
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
-55 ~ +150
1.0
50
V
V
V
°C
W
mA
Note
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


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