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Part Number: K6T1008C2C

 

 

 

 

Description: The K6T1008C2C families are fabricated by SAMSUNG's advanced CMOS process technology. The families sup...


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K6T1008C2C General Description


The K6T1008C2C families are fabricated by SAMSUNG's advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.

K6T1008C2C Maximum Ratings

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V -
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6T1008C2C-L
-40 to 85 °C K6T1008C2C-P
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K6T1008C2C Features

· Process Technology: TFT
· Organization: 128K x8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R

K6T1008C2C Connection Diagram

K6T1008C2C  Connection Diagram

K6T1008C2C datasheet

K6T1008C2C
PDF/DataSheet Download

  • Datasheet: K6T1008C2C
  • File Size: 193644 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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