Purchase K6T1008C2E-L, In-stock K6T1008C2E-L From SeekIC.
Part Number: K6T1008C2E-L
Description: The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The familie...
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K6T1008C2E-L
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DataSheet
General Description
K6T1008C2E-L General Description
The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
K6T1008C2E-L Maximum Ratings
| Item | Symbol | Ratings | Unit | Remark |
| Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to 7.0 | V | - |
| Voltage on Vcc supply relative to Vss | VCC | -0.5 to 7.0 | V | - |
| Power Dissipation | PD | 1.0 | W | - |
| Storage temperature | TSTG | -65 to 150 | - | |
| Operating Temperature | TA | 0 to 70 | K6T1008C2E-L/-B | |
| -40 to 85 | K6T1008C2E-P/-F |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K6T1008C2E-L Features
· Process Technology: TFT
· Organization: 128Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R
· Organization: 128Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R
K6T1008C2E-L
PDF/DataSheet Download
- Datasheet: K6T1008C2E-L
- File Size: 194648 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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