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Part Number: K6T1008U2C

 

 

 

 

Description: The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG¢s advanced CMOS process technolo...


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K6T1008U2C General Description


The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.

K6T1008U2C Maximum Ratings

PARAMETER SYMBOL Ratings Unit Remark
Voltage on Any Pin Relative to Vss VIN,OUT -0.5 to VCC+0.5 V  
Voltage on Vcc Supply Relative to Vss VCC -0.3 to 4.6 V  
Power Dissipation PD 1.0 W  
Storage Temperature TSTG -65 to 150 °C  
Operating Temperature IA 0 to 70 °C K6T1008V2C-B/K6T1008U2C-B
-25 to 85 K6T1008V2C-D/K6T1008U2C-D
-40 to 85 K6T1008V2C-F/K6T1008U2C-F

K6T1008U2C Features

· Process Technology: 0.4mm CMOS
· Organization: 128K x8
· Power Supply Voltage:
  K6T1008V2C family: 3.0~3.6V
  K6T1008U2C family: 2.7~3.3V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-SOP-525, 32-TSOP1-0820F/R,
  32-TSOP1-0813.4F/R

K6T1008U2C Connection Diagram

K6T1008U2C  Connection Diagram

K6T1008U2C datasheet

K6T0808C1D
PDF/DataSheet Download

  • Datasheet: K6T0808C1D
  • File Size: 174409 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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