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Part Number: K6X4016T3F-Q

 

 

 

 

Description: The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The familie...


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K6X4016T3F-Q General Description


The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6X4016T3F-Q Maximum Ratings

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3(max. 3.9V) V -
Voltage on Vcc supply relative to Vss VCC -0.2 to 3.9 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6X4016T3F-B

-40 to 85

°C

K6X4016T3F-F

-40 to 125

°C

K6X4016T3F-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K6X4016T3F-Q Features

· Process Technology: Full CMOS
· Organization: 256K x16
· Power Supply Voltage: 2.7~3.6V
· Low Data Retention Voltage: 2V(Min)
· Three State Outputs
· Package Type: 44-TSOP2-400F

K6X4016T3F-Q Connection Diagram

K6X4016T3F-Q  Connection Diagram

K6X4016T3F-Q datasheet

K6X4016T3F-Q
PDF/DataSheet Download

  • Datasheet: K6X4016T3F-Q
  • File Size: 141603 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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