Purchase K9F1208U0A, In-stock K9F1208U0A From SeekIC.
MFG:SAMSUNG
Part Number: K9F1208U0A
MFG: SAMSUNG
Description: Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65...
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K9F1208U0A
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DataSheet
General Description
K9F1208U0A General Description
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input.
The onchip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F12XXX0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
K9F1208U0A Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| 3.3V/2.65V DEVICE | ||||
| Voltage on any pin relative to VSS | VIN/OUT | -0.6 to + 4.6 | V | |
| VCC | -0.6 to + 4.6 | |||
| VCCQ | -0.6 to + 4.6 | |||
| Temperature Under Bias | K9F12XXX0A-XCB0 | TBIAS | °C | |
| K9F12XXX0A-XIB0 | ||||
| Storage Temperature | K9F12XXX0A-XCB0 | TSTG | °C | |
| K9F12XXX0A-XIB0 | ||||
| Short Circuit Current | Ios | mA | ||
K9F1208U0A Features
· Voltage Supply
- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Package
- K9F12XXX0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXX0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208U0A-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
- K9F1208U0A-V,F(WSOPI ) is the same device as
- K9F1208U0A-Y,P(TSOP1) except package type.
- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Package
- K9F12XXX0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXX0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208U0A-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
- K9F1208U0A-V,F(WSOPI ) is the same device as
- K9F1208U0A-Y,P(TSOP1) except package type.
K9F1208U0A Connection Diagram
K9F1208U0A-F
PDF/DataSheet Download
- Datasheet: K9F1208U0A-F
- File Size: 766143 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K9F1208B0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 1054247 KB
- ·K9F1208D0A
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-P
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-D
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208Q0A
- SAMSUNG [Samsung semiconductor]
- 512Mb/256Mb 1.8V NAND Flash Errata
- 671684 KB
K9F1208U0A Relative Products
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K9F1208Q0B
Offered in 64Mx8bit the K9F1208Q0B is 512M bit with spare 16M bit capacity. The K9F1208Q0B is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell K9F1208Q0B provides the most cost-effective solutIon for the solid state mass storage market. A program operation ca...
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