K9F1608WOA-TCBO

The K9F1608WOA-TCBO is designed as one kind of 2M x 8 Bit NAND flash memory and the NAND cell of this device provides the most cost-effective solution for the solid state mass storage market. It can be used in solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.

Features of the K9F1608WOA-TCBO are:(1)voltage supply:2.7V to 5.5V;(2)organization: the memory cell array is (2M + 64K)bit x 8bit and the data register is (256 + 8)bit x8bit;(3)automatic program and erase: page program: (256 + 8)byte, block erase: (4K + 128)byte and status register;(4)44(40) - lead TSOP type II (400mil / 0.8 mm pitch)-forward type;(5)command register operation;(6)reliable CMOS floating-gate technology;(7)command/address/data multipl-exed I/O port;(8)hardware data protection: program/erase lockout during power transitions.

The absolute maximum ratings of the K9F1608WOA-TCBO can be summarized as:(1)voltage on any pin relative to Vss:-0.6 to +7.0 V;(2)temperature under bias:-10 to +125 °C;(3)storage temperature:-65 to +150 °C;(4)short circuit output current:5 mA. If you want to know more information such as the electrical characteristics about the K9F1608WOA-TCBO, please download the datasheet in www.seekic.com or www.chinaicmart.com .