K9F1G08U0B-PCBO

The K9F1G08U0B-PCBO is 1G bit with spare 32M bit capacity.  Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.      
   
The features of K9F1G08U0B-PCBO can be summarized as:(1)Command Register Operation; (2)Cache Program Operation for High Performance Program; (3)Power-On Auto-Read Operation; (4)Intelligent Copy-Back Operation; (5)Unique ID for Copyright Protection; (6)Command/Address/Data Multiplexed I/O Port; (7)Fast Write Cycle Time: Program time : 300ms(Typ.),Block Erase Time : 2ms(Typ.); (8)Hardware Data Protection Program/Erase Lockout During Power Transitions; (9)Reliable CMOS Floating-Gate Technology:Endurance..100K Program/Erase Cycles,Data Retention..10 Years.

The absolute maximum ratings of K9F1G08U0B-PCBO are:(1)Temperature Under Bias:-10°C to +125°C; (2)Storage Temperature:-65°C to +150 °C; (3)Short Circuit Current:5 mA; (4)Voltage on any pin relative to VSS:VIN/OUT..-0.6V to + 2.45V,VCC..-0.2V to + 2.45V.NOTE : 1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

If you want to know more information such as the electrical characteristics about the K9F1G08U0B-PCBO, please download the datasheet in www.seekic.com or www.chinaicmart.com .