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K9F2G08U0M
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MFG:SAMSUNG Package Cooled:TSOP

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Part Number: K9F2G08U0M

MFG: SAMSUNG

Package Cooled: TSOP

Description: Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides ...

K9F2G08U0M General Description

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16 device)..

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility.

K9F2G08U0M Maximum Ratings

Parameter		Symbol	Rating		Unit
			K9F2GXXQ0M(1.8V)	K9F2GXXU0M(3.3V)
Voltage on any pin relative to VSS		VIN/OUT	-0.6to+2.45	-0.6to+4.6	V
		VCC	-0.6 to + 2.45	-0.6 to + 4.6
TemperatureUnderBias	K9F2GXXU0M-XCB0	TBIAS	-10 to +125		°C
	K9F2GXXU0M-XIB0		-40 to +125
Storage Temperature	K9F2GXXU0M-XCB0	TSTG	-40 to +125		°C
	K9F2GXXU0M-XIB0
Short Circuit Current		Ios	5		mA

K9F2G08U0M Features

Voltage Supply
    -1.8V device(K9F2GXXQ0M): 1.70V~1.95V
    -3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
Organization
    - Memory Cell Array
    -X8   device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
    -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
    - Data Register
    -X8   device(K9F2G08X0M): (2K + 64)bit x8bit
    -X16 device(K9F2G16X0M): (1K + 32)bit x16bit
    - Cache Register
    -X8   device(K9F2G08X0M) : (2K + 64)bit x8bit
    -X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
Automatic Program and Erase
    - Page Program
    -X8   device(K9F2G08X0M) : (2K + 64)Byte
    -X16 device(K9F2G16X0M) : (1K + 32)Word
    - Block Erase
    -X8   device(K9F2G08X0M) : (128K + 4K)Byte
    -X16 device(K9F2G16X0M) : (64K + 2K)Word
Page Read Operation
    - Page Size
    - X8   device(K9F2G08X0M) : 2K-Byte
    - X16 device(K9F2G16X0M) : 1K-Word
    - Random Read : 25ms(Max.)
    - Serial Access : 50ns(Min.)
                            30ns(Min., K9F2G08U0M only)
Fast Write Cycle Time
    - Page Program time : 300ms(Typ.)
    - Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
    - Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
    - Endurance : 100K Program/Erase Cycles
    - Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection Package :
    - K9F2GXXX0M-YCB0/YIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    - K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

K9F2G08U0M Connection Diagram

K9F2G08U0M datasheet

K9F2G08U0M
PDF/DataSheet Download

Datasheet: K9F2G08U0M
File Size: 860032 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Click here to Download

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64M x 8 Bit NAND Flash Memory
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·K9F1208D0A
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64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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·K9F1208D0A-P
SAMSUNG [Samsung semiconductor]
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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·K9F1208D0A-Y
SAMSUNG [Samsung semiconductor]
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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·K9F1208D0B
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
785423 KB
·K9F1208D0B-D
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
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·K9F1208D0B-Y
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
785423 KB
·K9F1208Q0A
SAMSUNG [Samsung semiconductor]
512Mb/256Mb 1.8V NAND Flash Errata
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K9F2G08U0M Relative Products

K9F2G08U0A-PCB0
The K9F2G08U0A-PCB0 is one member of the K9F4G08U0A which is designed as the 2G-bit NAND flash memory family with spare 64M-bit. This device has a program operation that can be performed in typical 200s on the (2K+64)Byte page, and has an erase operation can...
K9F2G08U0APCB0
The K9F2G08U0APCB0 is one member of the K9F4G08U0A which is designed as the 2G-bit NAND flash memory family with spare 64M-bit. This device has a program operation that can be performed in typical 200s on the (2K+64)Byte page, and has an erase operation can ...
K9F2G08U0A
The K9F2G08U0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase o...
K9F2G08R0A-J
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page...
K9F2G08R0A
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page...
K9F2G08Q0M
Offered in 256Mx8bit or 128Mx16bit, the K9F2G08Q0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byt...

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