PinoutDescriptionThe K9F2G08UOM-PCBO is a kind of 2G bit with spare 64M bit capacity and the NAND cell can offer the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page ...
K9F2G08UOM-PCBO: PinoutDescriptionThe K9F2G08UOM-PCBO is a kind of 2G bit with spare 64M bit capacity and the NAND cell can offer the most costeffective solution for the solid state mass storage market. A program op...
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Features: *Voltage Supply - K9F2808Q0B : 1.7~1.9V - K9F2808U0B : 2.7 ~ 3.6 V *Organization - Memo...
Features: · Voltage Supply- 1.8V device(K9F28XXQ0C) :1.7~1.95V- 3.3V device(K9F28XXU0C) : 2.7 ~ 3....
Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit ...

The K9F2G08UOM-PCBO is a kind of 2G bit with spare 64M bit capacity and the NAND cell can offer the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block.The I/O pins serve as the ports for address and data input/output as well as command input.
Features of the K9F2G08UOM-PCBO are:(1) fast write cycle time;(2) automatic program and erase;(3) unique ID for copyright protection;(4) inteligent copy-back with internal 1 bit/528 byte;(5) command register operation;(6) hardware data protection;(7) reliable CMOS floating-gate technology.
The absolute maximum ratings of the K9F2G08UOM-PCBO can be summarized as:(1): voltage on any pin relative to VSS is -0.6 V to +4.6 V(Vout,Vin) or is -0.6 V to +4.6(Vcc);(2): short circuit current(IOS) is 5 mA;(3): temperature under bias(Tbias) is -10 to +125; (4): storage temperature(Tstg) is -40 to +125.