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Part Number: KM23C4100DET

 

 

 

 

Description: The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process ...


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KM23C4100DET General Description


The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 524,288 x 8 bit(byte mode) or as262,144 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table)

This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and data memory, character generator.

The KM23C4100D(E)T is packaged in a 44-TSOP2.

KM23C4100DET Maximum Ratings

Item
Symbol
Rating
Unit
Remark
Voltage on Any Pin Relative to VSS
VIN
-0.3 to +7.0
V
-
Temperature Under Bias
TBIAS
-10 to +85
-
Storage Temperature
TStg
-55 to +150
-
Operating Temperature
TA
0to +70
KM23C4100DT
-20 to +85
KM23C4100DET

KM23C4100DET Features

·  Switchable organization
    -524,288 x 8(byte mode)
    -262,144 x 16(word mode)
· Fast access time : 80ns(Max.)
· Supply voltage : single +5V
· Current consumption
    -Operating : 50mA(Max.)
    -Standby : 50mA(Max.)
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
· Package
    -KM23C4100D(E)T : 44-TSOP2-400

KM23C4100DET Connection Diagram

KM23C4100DET  Connection Diagram

KM23C4100DET datasheet

KM23C4100DET
PDF/DataSheet Download

  • Datasheet: KM23C4100DET
  • File Size: 74193 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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