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Part Number: KM23V32005BG

 

 

 

 

Description: The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process te...


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KM23V32005BG General Description


The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table)

This device includes page read mode function, page read mode allows 8 words(or 16 bytes) of data to read fast in the same page, CE and A3 ~ A20 should not be changed.

This device operates with a 3.3V power supply, and all inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and data memory, character generator.

The KM23V32005BG is packaged in a 44-SOP.

KM23V32005BG Maximum Ratings

Item
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN
-0.3 to +4.5
V
Temperature Under Bias
TBIAS
-10 to +85
Storage Temperature
TStg
-55 to +150

KM23V32005BG Features

· Switchable organization
  -4,194,304x8(byte mode)
  -2,097,152x16(word mode)
· Fast access time
  -Random Access Time : 100ns(Max.)
  -Page Access Time : 30ns(Max.)
· 8 words / 16 bytes page access
· Supply voltage : single +3.3V
· Current consumption
  -Operating : 60mA(Max.)
  -Standby : 30mA(Max.)
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
· Package
  -KM23V32005BG : 44-SOP-600

KM23V32005BG Connection Diagram

KM23V32005BG  Connection Diagram

KM23V32005BG datasheet

KM23V32005BG
PDF/DataSheet Download

  • Datasheet: KM23V32005BG
  • File Size: 89093 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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