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Part Number: KM23V8105D
Description: The KM23V8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process t...
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KM23V8105D
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DataSheet
General Description
KM23V8105D General Description
The KM23V8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table)
This device includes PAGE read mode function, page readmode allows 4 words(or 8 bytes) of data to read fast in the same page, CE and A2 ~ A18 should not be changed.
This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and data memory, character generator.
The KM23V8105D is packaged in a 42-DIP and the KM23V8105DG in a 44-SOP.
KM23V8105D Maximum Ratings
|
Item |
Symbol |
Rating |
Unit |
| Voltage on Any Pin Relative to VSS |
VIN |
-0.3 to +4.5 |
V |
| Temperature Under Bias |
TBIAS |
-10 to +85 |
|
| Storage Temperature |
TSTG |
-55 to +150 |
KM23V8105D Features
· Switchable organization
-1,048,576 x 8(byte mode)
-524,288 x 16(word mode)
· Random access time/Page Access Time
-3.3V Operation : 100/30ns(Max.)
-3.0V Operation : 120/50ns(Max.)
· 4 Words / 8 bytes page access
· Supply voltage : single +3.0V/ single +3.3V
· Current consumption
-Operating : 40mA(Max.)
-Standby : 30mA(Max.)
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
· Package
- KM23V8105D : 42-DIP-600
- KM23V8105DG : 44-SOP-600
KM23V8105D Connection Diagram
KM23V8105D
PDF/DataSheet Download
- Datasheet: KM23V8105D
- File Size: 93221 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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