Purchase KM416C1204C, In-stock KM416C1204C From SeekIC.
Part Number: KM416C1204C
Description: This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers hig...
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KM416C1204C
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DataSheet
General Description
KM416C1204C General Description
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
KM416C1204C Maximum Ratings
| Parameter | Symbol | Rating 3.3V | Rating5V | Unit |
| Voltage on any pin relative to VSS | VIN, VOUT | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Voltage on VCC supply relative to VSS | VCC | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Storage temperature | TSTG | -55 to +150 | -55 ~ +150 | °C |
| Power dissipation | PD | 1.0 | 1.0 | W |
| Short circuit current | IOS | 50 | 50 | mA |
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
KM416C1204C Features
• Part Identification
- KM416C1004C/C-L (5V, 4K Ref.)
- KM416C1204C/C-L (5V, 1K Ref.)
- KM416V1004C/C-L (3.3V, 4K Ref.)
- KM416V1204C/C-L (3.3V, 1K Ref.)
• Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
- KM416C1004C/C-L (5V, 4K Ref.)
- KM416C1204C/C-L (5V, 1K Ref.)
- KM416V1004C/C-L (3.3V, 4K Ref.)
- KM416V1204C/C-L (3.3V, 1K Ref.)
• Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
KM416C1204C Connection Diagram
KM416C1204C
PDF/DataSheet Download
- Datasheet: KM416C1204C
- File Size: 823953 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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KM416C1204C Relative Products
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This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416C1200C. Fast Page Mode KM416C1200C offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access ti...
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