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Description: The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM61...


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KM6161002BI General Description


The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control ( UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM6161002B is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward.

KM6161002BI Maximum Ratings


Parameter
Rating
SYMBOL
UNIT
Voltage on Any Pin Relative to V SS
-0.5 to 7.0
IO
V
Voltage on VCC Supply Relative to VSS
-0.5 to 7.0
IFSM
V
Power Dissipation
1.0
VR
W
Storage Temperature
65 to 150
T j
°C
Operating Temperature
Commercial 0 to 70
TA
°C
Industrial -40 to 85

KM6161002BI Features

• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation
   Standby (TTL) : 50mA(Max.)
   (CMOS) : 10mA(Max.)
   Operating KM6161002B - 8 : 200 mA(Max.)
   KM6161002B - 10 : 195 mA(Max.)
   KM6161002B - 12 : 190 mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
• Standard Pin Configuration KM6161002BJ : 44-SOJ-400 KM6161002BT : 44-TSOP2-400F

KM6161002BI Connection Diagram

KM6161002BI  Connection Diagram

KM6161002BI datasheet

KM6161002BI
PDF/DataSheet Download

  • Datasheet: KM6161002BI
  • File Size: 206042 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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