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KSD1221OTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD1221OTU Data Sheet

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Part Number:: KSD1221OTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/15

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Specifications Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V ...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Transistor

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	3 A
DC Collector/Base Gain hfe Min :	60	Configuration :	Single
Maximum Operating Frequency :	3 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-251
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-251

Parameters:

Technical/Catalog Information	KSD1221OTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 300mA, 3A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSD1221OTU KSD1221OTU

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KSD1221OTU

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