KSE2955T

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
DC Collector/Base Gain hfe Min : 20
Packaging : Bulk
Package / Case : TO-220
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 2 MHz


Application

DC Current Gain Specified to  I _C = 10 A
High Current Gain Bandwidth Product : f_T = 2MHz (Min.)


Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	-70	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-10	A
IB	Base Current	-6	A
PC	Collector Dissipation (Tc =25oC)	75	W
	Collector Dissipation (Ta=25oC)	0.6	W
TJ	Junction Temperature	150	oC
TSTG	Storage Temperature	-55-150	oC

Parameters:

Technical/Catalog Information	KSE2955T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSE2955T KSE2955T