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Part Number: LET20015
Description: The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF ...
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LET20015
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DataSheet
General Description
LET20015 General Description
The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20015's superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
LET20015 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | -0.5 to +15 | V |
| ID | Drain Current | 2 | A |
| PDISS | Power Dissipation (@ Tc = 70 °C) | TBD | W |
| Tj | Max. Operating Junction Temperature | 165 | |
| TSTG | Storage Temperature | -65 to +175 |
LET20015 Features
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 15 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
POUT = 2.5 W
EFF. = 20 %
• COMMON SOURCE CONFIGURATION
• POUT = 15 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
POUT = 2.5 W
EFF. = 20 %
LET20015
PDF/DataSheet Download
- Datasheet: LET20015
- File Size: 69149 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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