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Part Number: LET20030S

 

 

 

 

Description: The LET20030S is a common source N-Channel,enhancement-mode lateral Field-Effect RF ...


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LET20030S General Description


The LET20030S is  a  common  source N-Channel,enhancement-mode lateral Field-Effect RF power ransistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2  GHz. LET20030S  boasts  the  excellent gain,linearity and  reliability  of  ST's  latest  LDMOS technology mounted in the first true SMD plastic RF power  package,  PowerSO-10RF.  LET20030S's superior  linearity  performance makes it an ideal solution for base station applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power  SMD  package. It   has  been  specially optimized  for  RF needs and offers excellent RF performances and ease of assembly.

LET20030S Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current TBD A
PDISS Power Dissipation (@ Tc = 70 °C) 140 W
Tj Max. Operating Junction Temperature 165
TSTG Storage Temperature -65 to +175

LET20030S Features

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
POUT = 4.5 W
EFF = 17 %

LET20030S datasheet

LET20030S
PDF/DataSheet Download

  • Datasheet: LET20030S
  • File Size: 44051 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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