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LET21004

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-So...

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SeekIC No. : 004393590 Detail

LET21004: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTIONSpecifi...

LET21004 Data Sheet

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Part Number:
LET21004
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 1 A
PDISS Power Dissipation (@ Tc = 70 °C) TBD W
Tj Max. Operating Junction Temperature 150
TSTG Storage Temperature -65 to +150



Description

The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent gain, linearity  and  reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic  package,  PowerFLAT™.

LET21004's superior linearity performance makes it  an  ideal  solution  for  base  station applications.




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