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Part Number: LET21008

 

 

 

 

Description: The LET21008 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. I...


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LET21008 General Description


The LET21008 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain,linearity  and  reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic  package,  PowerFLAT™.

LET21008's superior linearity performance makes it  an  ideal  solution   for   base  station applica-tions.

LET21008 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 2.0 A
PDISS Power Dissipation (@ Tc = 70 °C) TBD W
Tj Max. Operating Junction Temperature 150
TSTG Storage Temperature -65 to +150

LET21008 Features

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION

LET21008 datasheet

LET21008
PDF/DataSheet Download

  • Datasheet: LET21008
  • File Size: 41820 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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