Purchase LET21030C, In-stock LET21030C From SeekIC.
Part Number: LET21030C
Description: The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF ...
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LET21030C
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DataSheet
General Description
LET21030C General Description
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.
LET21030C Maximum Ratings
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | -0.5 to +15 | V |
| ID | Drain Current | 4 | A |
| PDISS | Power Dissipation (@ Tc = 70 °C) | 65 | W |
| Tj | Max. Operating Junction Temperature | 200 | |
| TSTG | Storage Temperature | -65 to +200 |
LET21030C Features
• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
LET21030C
PDF/DataSheet Download
- Datasheet: LET21030C
- File Size: 64132 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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