Purchase LH28F160BGH-TL, In-stock LH28F160BGH-TL From SeekIC.
MFG:SHARP D/C:05+
Part Number: LH28F160BGH-TL
MFG: SHARP
D/C: 05+
Description: LIM The LH28F160BG-TL/BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvol...
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LH28F160BGH-TL
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DataSheet
General Description
LH28F160BGH-TL General Description
LIM The LH28F160BG-TL/BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BG-TL/ BGH-TL can operate at VCC and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160BG-TL/BGH-TL offer two levels of protection : absolute protection with VPP at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their code security needs.
LH28F160BGH-TL Features
• Smart 3 technology
2.7 to 3.6 V VCC
2.7 to 3.6 V or 12 V VPP
• High performance read access time
LH28F160BG-TL10/BGH-TL10
100 ns (2.7 to 3.6 V) LH28F160BG-TL12/BGH-TL12
120 ns (2.7 to 3.6 V) MINARY
• Enhanced automated suspend options
Word write suspend to read
Block erase suspend to word write
Block erase suspend to read
• SRAM-compatible write interface
• Optimized array blocking architecture
Two 4 k-word boot blocks
Six 4 k-word parameter blocks
Thirty-one 32 k-word main blocks
Top or bottom boot location
• Enhanced cycling capability
100 000 block erase cycles
• Low power management
Deep power-down mode
Automatic power saving mode decre in static mode Automated word write and block erase
Command user interface
Status register
ETOXTM* V nonvolatile flash technology Packages
48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend
60-ball CSP (FBGA060/048-P-0811)
* ETOX is a trademark of Intel Corporation.
LH28F160BGH-TL Connection Diagram
LH28F160BGH-TL
PDF/DataSheet Download
- Datasheet: LH28F160BGH-TL
- File Size: 231074 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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LIM The LH28F160BG-TL/BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BG-TL/ BGH-TL can operate at VCC and VPP = 2.7 V. Their low voltage operati...
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