LL4448

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Operating Temperature Range :
Package / Case :
Packaging : Reel


Features:

·Silicon Epitaxial Planar Diode
·Fast switching diode in MiniMELF case especially suited for automatic insertion.
·This diode is also available in other case styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation 1N4448W, and the SOT-23 case with the type designation IMBD4448.

Specifications

	Symbol	Value	Unit
Reverse Voltage	VR	75	V
Peak Reverse Voltage	VRM	100	V
Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 and f50 Hz	I0	1501)	mA
Surge Forward Current at t < 1 s and Tj = 25	IFSM	500	mA
Power Dissipation at Tamb = 25	Ptot	5001)	mW
Junction Temperature	Tj	175
Storage Temperature Range	Ts	-65 to +175
1)Valid provided that electrodes are kept at ambient temperature.