Purchase LP6836P100, In-stock LP6836P100 From SeekIC.
Part Number: LP6836P100
Description: `The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InG...
- Table of contents:
LP6836P100
-
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DataSheet
General Description
LP6836P100 General Description
`The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier
gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4
passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range.
`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters. The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.
LP6836P100 Maximum Ratings
|
SYMBOL |
PARAMETER |
RATING1 |
|
VDS |
Drain-Source Voltage |
10V |
|
VGS |
Gate-Source Voltage |
-4V |
|
IDS |
Drain-Source Current |
2 x IDSS |
|
IG |
Gate Current |
18 mA |
|
PIN |
RF Input Power |
180 mW |
|
TCH |
Channel Temperature |
175 |
|
TSTG |
Storage Temperature |
-65/175 |
|
PT |
Power Dissipation |
1.3W3,4 |
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: PT º (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and PIN
= RF input power.
4. Power Dissipation to be de-rated as follows above 25:
Absolute Maximum: PT = 1.3W - (9mW/) x THS
Recommended Continuous Operating: PT = 1.1W - (9mW/) x THS
where THS = heatsink or ambient temperature.
5. Specifications subject to change without notice.
LP6836P100 Features
· +24.5 dBm Typical Power at 15 GHz
· 12 dB Typical Power Gain at 15 GHz
· Low Intermodulation Distortion
· 55% Power-Added-Efficiency
· Color-coded by IDSS range
· 12 dB Typical Power Gain at 15 GHz
· Low Intermodulation Distortion
· 55% Power-Added-Efficiency
· Color-coded by IDSS range
LP6836P100 Typical Application
`Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5" diskette, or may be down-loaded from our Web Page.
LP6836P100
PDF/DataSheet Download
- Datasheet: LP6836P100
- File Size: 23651 KB
- Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
- Click here to Download
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