LP6836P100

Features: · +24.5 dBm Typical Power at 15 GHz· 12 dB Typical Power Gain at 15 GHz· Low Intermodulation Distortion· 55% Power-Added-Efficiency· Color-coded by IDSS rangeApplication`Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete desi...

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SeekIC No. : 004399025 Detail

LP6836P100: Features: · +24.5 dBm Typical Power at 15 GHz· 12 dB Typical Power Gain at 15 GHz· Low Intermodulation Distortion· 55% Power-Added-Efficiency· Color-coded by IDSS rangeApplication`Applications Notes...

floor Price/Ceiling Price

Part Number:
LP6836P100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

· +24.5 dBm Typical Power at 15 GHz
· 12 dB Typical Power Gain at 15 GHz
· Low Intermodulation Distortion
· 55% Power-Added-Efficiency
· Color-coded by IDSS range



Application

`Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5" diskette, or may be down-loaded from our Web Page.


Specifications

SYMBOL

PARAMETER

RATING1

VDS

Drain-Source Voltage

10V

VGS

Gate-Source Voltage

-4V

IDS

Drain-Source Current

2 x IDSS

IG

Gate Current

18 mA

PIN

RF Input Power

180 mW

TCH

Channel Temperature

175

TSTG

Storage Temperature

-65/175

PT

Power Dissipation

1.3W3,4

NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: PT º (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and PIN
= RF input power.
4. Power Dissipation to be de-rated as follows above 25:
              Absolute Maximum: PT = 1.3W - (9mW/) x THS
              Recommended Continuous Operating: PT = 1.1W - (9mW/) x THS
where THS = heatsink or ambient temperature.
5. Specifications subject to change without notice.



Description

`The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier
gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4
passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range.

`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters. The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.


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