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MFG:ph  Package Cooled:ph  D/C:dc99  

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Part Number: LTE42012R

 

MFG: ph

Package Cooled: ph

D/C: dc99

Description: NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with...


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LTE42012R General Description


NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

LTE42012R Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE =70W - 20 V
VCEO emitter-base voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC DC collector current (DC)   - 800 mA
Ptot total power dissipation Tmb<= 75 °C - 8 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature at 0.3 mm from ceramic;
t <= 10 s		 - 235 °C

LTE42012R Features

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input matching cell improves input impedance and allows an easier design of wideband circuits.

LTE42012R Typical Application

· Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.

LTE42012R datasheet

LTE42012R
PDF/DataSheet Download

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  • LTE-3271TL

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    LTE-3271T

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