M28C16A

Features:

FASTACCESSTIME:
  150nsat 5V
  250nsat 3V
SINGLESUPPLYVOLTAGE:
  5V± 10%forM28C16Aand M28C17A
  2.7Vto 3.6VforM28C16-xxW
LOW POWERCONSUMPTION
FASTWRITE CYCLE
  32BytesPageWrite Operation
  Byteor PageWrite Cycle: 5ms
ENHANCEDENDOF WRITEDETECTION
  Ready/BusyOpenDrainOutput
  DataPolling
  ToggleBit
PAGELOADTIMERSTATUSBIT
HIGHRELIABILITYSINGLEPOLYSILICO CMOSTECHNOLOGY
  Endurance>100,000Erase/WriteCycles
  DataRetention>40Years
JEDECAPPROVEDBYTEWIDEPINOUT


Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	AmbientOperatingTemperature(2)	40to85	°C
TSTG	StorageTemperatureRange	65to150	°C
VCC	SupplyVoltage	0.3to6.5	V
VIO	Input/OutputVoltage	0.3toVCC+0.6	V
VI	InputVoltage	0.3to6.5	V
VESD	ElectrostaticDischargeVoltage(HumanBodymodel)	3000	V

Notes:
1.Except for the rating "Operating Temperature Range",stresses above those listedin the Table" Absolute Maximum Ratings"may cause permanent damage to the device.These are stress ratings only and operation o fthe device at the seor any other conditions above those indicated in the Operating sections of this specification is not implied.Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.Refer also to the STMicroelectronics SUREP rogramand other relevant quality documents.
2.Depends on range.

 

Description

TheM28C16Aand M28C17Aare 2Kx8lowpower ParallelEEPROMfabricatedwithSTMicroelectron- icsproprietarysinglepolysiliconCMOStechnology. Thedeviceoffersfast accesstimewith low power dissipationand requiresa 5V or3V powersupply.