Purchase M28C17B, In-stock M28C17B From SeekIC.


Part Number: M28C17B
Description: The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with ...


Description: The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with ...
The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply.
|
Symbol |
Parameter |
Value |
Unit |
| TA | Ambient Operating Temperature |
40 to 125 |
|
| TSTG | Storage Temperature |
65 to 150 |
|
| VCC | Supply Voltage |
-0.3 to 6.5 |
V |
| VIO | Input/Output Voltage |
-0.6 to VCC+0.6 |
V |
| VI | Input Voltage |
0.3 to 6.5 |
V |
| VESD | Electrostatic Discharge Voltage (Human Body model) (3) |
4000 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100 pF, 1500 )
M28C17B
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