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Part Number: M28C17B

 

 

 

 

Description: The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with ...


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M28C17B General Description


The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply.

M28C17B Maximum Ratings



Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature
40 to 125
TSTG Storage Temperature
65 to 150
VCC Supply Voltage
-0.3 to 6.5
V
VIO Input/Output Voltage
-0.6 to VCC+0.6
V
VI Input Voltage
0.3 to 6.5
V
VESD Electrostatic Discharge Voltage (Human Body model) (3)
4000
V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100 pF, 1500   )


M28C17B Features

 ` Fast Access Time: 90 ns at VCC=5V
 ` Single Supply Voltage:
     4.5 V to 5.5 V for M28CxxB
     2.7 V to 3.6 V for M28CxxB-W
 ` Low Power Consumption
 ` Fast BYTE and PAGE WRITE (up to 64 Bytes)
     3ms at VCC=4.5 V
     5ms at VCC=2.7 V
 ` Enhanced Write Detection and Monitoring:
     Data Polling
     Toggle Bit
      Page Load Timer Status
 ` JEDEC Approved Bytewide Pin-Out
 ` Software Data Protection
 ` 100000 Erase/Write Cycles (minimum)
 ` Data Retention (minimum): 40 Years

M28C17B Connection Diagram

M28C17B  Connection Diagram M28C17B  Connection Diagram

M28C17B datasheet

M28C17B
PDF/DataSheet Download

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