Purchase M29W002BT, In-stock M29W002BT From SeekIC.
- Table of contents:
M29W002BT
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Suppliers
DataSheet
General Description
M29W002BT Maximum Ratings
| Symbol | Parameter | Value | Unit |
| TA | Ambient Operating Temperature (Temperature Range Option 1) | 0 to 70 | |
| Ambient Operating Temperature (Temperature Range Option 6) | 40 to 85 | ||
| TBIAS | Temperature Under Bias | 50 to 125 | |
| TSTG | Storage Temperature | 65 to 150 | |
| VIO(2) | Input or Output Voltage | 0.6 to 4 | V |
| VCC | Supply Voltage | 0.6 to 4 | V |
| VID | Identification Voltage | 0.6 to 13.5 | V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns during transitions.
M29W002BT Features
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
10µs by Byte typical
7 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 4 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte Program algorithm
Embedded Multi-Block/Chip Erase algorithm
Status Register Polling and Toggle Bits
Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
TEMPORARY BLOCK UNPROTECTION MODE
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code M29W002BT: 40h
Bottom Device Code M29W002BB: C2h
ACCESS TIME: 55ns
PROGRAMMING TIME
10µs by Byte typical
7 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 4 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte Program algorithm
Embedded Multi-Block/Chip Erase algorithm
Status Register Polling and Toggle Bits
Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
TEMPORARY BLOCK UNPROTECTION MODE
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code M29W002BT: 40h
Bottom Device Code M29W002BB: C2h
M29W002BT Connection Diagram
M29W002BT
PDF/DataSheet Download
- Datasheet: M29W002BT
- File Size: 160191 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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