M29W004B

PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C VIO(2) Input or Output Voltage 0.6 to 5 V VCC Su...

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SeekIC No. : 004404395 Detail

M29W004B: PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Stora...

floor Price/Ceiling Price

Part Number:
M29W004B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (3)
40 to 85
°C
TBIAS
Temperature Under Bias
50 to 125
°C
TSTG
Storage Temperature
65 to 150
°C
VIO(2)
Input or Output Voltage
0.6 to 5
V
VCC
Supply Voltage
0.6 to 5
V
V(A9, E, G, RP)(2)
A9, E, GRP Voltage
0.6 to 13.5
V



Description

The M29W004B is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29W004B allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings.

The M29W004B is offered in TSOP40 (10 x 20mm) package.




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