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Part Number: M29W004T
Description: The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and pr...
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M29W004T
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General Description
M29W004T General Description
The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings.
The device is offered in TSOP40 (10 x 20mm) package.
M29W004T Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
TA |
Ambient Operating Temperature (3) |
40 to 85 |
°C |
|
TBIAS |
Temperature Under Bias |
50 to 125 |
°C |
|
TSTG |
Storage Temperature |
65 to 150 |
°C |
|
VIO(2) |
Input or Output Voltage |
0.6 to 5 |
V |
|
VCC |
Supply Voltage |
0.6 to 5 |
V |
|
V(A9, E, G, RP)(2) |
A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
M29W004T Connection Diagram
M29W004T
PDF/DataSheet Download
- Datasheet: M29W004T
- File Size: 161103 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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