Position: Home > Datasheet list > M29 Series > Index M > M29W008ET
Electronica China

Purchase M29W008ET, In-stock M29W008ET From SeekIC.

 

M29W008ET Product Image

M29 Series Datasheet download

Five Points

Part Number: M29W008ET

 

 

 

 

Description: The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-...


Urgent Purchase

M29W008ET General Description


The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.

The memory is divided into blocks that are asymmetrically arranged. Both M29W008ET and M29W008EB devices have an array of 19 blocks composed of one Boot Block of 16 KBytes, two Parameter Blocks of 8 KBytes, one Main Block of 32 KBytes and fifteen Main Blocks of 64 KBytes. In the M29W008ET, the Boot Block is located at the top of the memory address space while in the M29W008EB, it is located at the bottom. The memory maps are showed in Figure 4: Block Addresses (Top Boot Block) and Figure 5: Block Addresses (Bottom Boot Block). Each block can be erased and reprogrammed independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. Erase operations in one block can be temporarily suspended in order to read from or program in blocks that are not being erased. Each block can be programmed and erased over 100,000 cycles.

Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. All previously protected blocks can be temporarily unprotected.

In order to meet environmental requirements, ST offers this device in a TSOP40 (10 x 20mm) ECOPACK® package. ECOPACK® packages are Lead-free and RoHS compliant. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

The device is offered in package and supplied with all the bits erased (set to '1').

M29W008ET Maximum Ratings

Symbol
Parameter
Value
Unit
TBIAS
Temperature Under Bias
50 to 125
°C
TSTG
Storage Temperature
65 to 150
°C
TLEAD
Lead Temperature during Soldering(1)
260(2)
°C
VIO(3)
Input or Output Voltage
0.6 to 5
V
VCC
Supply Voltage
0.6 to 5
V
VID(3)
Identification Voltage
0.6 to 13.5
V

M29W008ET Features

ACCESS TIMES: 70ns, 90ns
PROGRAMMING TIME: 10s per Byte typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
   Embedded Byte Program Algorithm
   Status Register bits and Ready/Busy Output
19 MEMORY BLOCKS
   1 Boot Block (Top or Bottom location)
   2 Parameter and 16 Main Blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
   Standby and Automatic Standby modes
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
   Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   M29W008ET Device Code: D2h
   M29W008EB Device Code: DCh
ECOPACK® TSOP40 PACKAGE

M29W008ET Connection Diagram

M29W008ET  Connection Diagram

M29W008ET datasheet

M29W008ET
PDF/DataSheet Download

  • Datasheet: M29W008ET
  • File Size: 289661 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

Find M29W008ET Suppliers

  • ·M2901V
  •  
  • ORDERING INFORMATION 
  • 149016 KB
  • M2901V Datasheet Download
  • ·M2907A
  • ETC [ETC] 
  • Mini size of Discrete semiconductor elements 
  • 512569 KB
  • M2907A Datasheet Download
  • ·M293
  • STMICROELECTRONICS [STMicroelectronics] 
  • EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS 
  • 2159674 KB
  • M293 Datasheet Download
  • ·M293B1
  • STMICROELECTRONICS [STMicroelectronics] 
  • EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS 
  • 2159674 KB
  • M293B1 Datasheet Download
  • ·M295V002B-120K1TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120K1TR Datasheet Download
  • ·M295V002B-120K6TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120K6TR Datasheet Download
  • ·M295V002B-120N1TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120N1TR Datasheet Download
  • ·M295V002B-120N6TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120N6TR Datasheet Download

M29W008ET Relative Products

  • M29W008EB

    M29W008EB

    The M29W008EB is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase oper...

  • M29W008DT

    M29W008DT

    The M29W008DT is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase oper...

  • M29W008DB

    M29W008DB

    The M29W008DB is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase oper...

  • M29W008B

    M29W008B

    The M29W008B is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are ge...

  • M29W008AT

    M29W008AT

    The M29W008AT is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are g...

  • M29W008AB

    M29W008AB

    The M29W008AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are g...

Hotspot Suppliers Product

  • Models: D015118AA01
Price: 1-3 USD

    D015118AA01

    Price: 1-3 USD

    D015118AA01, Microsemi Corporation, CDIP

  • Models: MB90F497G
Price: 7-8 USD

    MB90F497G

    Price: 7-8 USD

    high-performance 16-bit microcontroller, 4 to 16 MHz, -2.0 to + 2.0 mA, 315 mW, QFP

  • Models: VJ0402A560JNAAJ
Price: 0.01-100 USD

    VJ0402A560JNAAJ

    Price: 0.01-100 USD

    surface mount multilayer, ceramic chip capacitor, TCC critical application, 120 pF, 2.7 μF

  • Models: AT45DB081D-SSU
Price: 5.9524-6.8027 USD

    AT45DB081D-SSU

    Price: 5.9524-6.8027 USD

    serial-interface Flash memory, -0.6V to VCC + 0.6V, 8SOIC, 66 MHz

  • Models: HNC-661
Price: 16.88-17.88 USD

    HNC-661

    Price: 16.88-17.88 USD

    sensor, 200 KHz, high accuracy, low temperature, anti-interference ability

  • Models: P83C528EFB283
Price: 1.3-2.4 USD

    P83C528EFB283

    Price: 1.3-2.4 USD

    QFP, single-chip, 8-bit, microcontroller, 80C51 CPU, 4.5 to 5.5 V, 3.3 mA

  • Models: LT1184FCS
Price: 1.45-1.55 USD

    LT1184FCS

    Price: 1.45-1.55 USD

    dual current mode switching regulator, SOP-16, 100mA, 60V, Low Quiescent Current, High Switching F...

  • Models: CM30TF-12H
Price: 14.5-18 USD

    CM30TF-12H

    Price: 14.5-18 USD

    Six-IGBT, IGBTMOD, H-Series Module, 30 Amperes, 600 Volts

  • Models: ECQV1H334JL2
Price: 1-2 USD

    ECQV1H334JL2

    Price: 1-2 USD

    Plastic Film Capacitor, Small size, large capacitance, RoHS directive compliant, 1kHz, DIP

  • Models: TLV1570IDW
Price: 2.15-2.38 USD

    TLV1570IDW

    Price: 2.15-2.38 USD

    20-SOIC, 2.7 V to 5.5 V, 8-Channel, 10-bit, 1.25-MSPS, serial analog-to-digital converter

  • Models: W83791G
Price: 4.2-5 USD

    W83791G

    Price: 4.2-5 USD

    48-pin LQFP, External Sensor, 4.5 V to 5.5 V, Hardware Monitor, H/W IC, 8-bit ADC

  • Models: XTR111AIDRCRG4
Price: 1.35-1.5 USD

    XTR111AIDRCRG4

    Price: 1.35-1.5 USD

    voltage-to-current converter, 10-SON, 3V to 15V, XTR111AIDRCRG4, Texas Instruments

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All